Incomplete activation and ionization of dopants in Si at room temperature

A new model for incomplete ionization of dopants in Si is presented, where the Fermi level free carriers may displace with respect to case full activation dopants. The curves ratio free-carrier density and active-dopants vs doping, which are calculated at partial model, overlap exactly same quantity a reported model. Calculations performed without parameterizations states occupancy probability dopant band simulating around Mott concentration. With parameterizations, comparisons Hall-mobility data show that more accurate than Without allows calculating carrier species majority-carrier mobility fit measured minority-carrier high dopings agree Klaassen minority carriers. consistency theory models discussed, found be most appropriate this respect. overlaps band-gap narrowing Auger lifetime majority